物理气相沉积(Physical Vapor Deposition, PVD)
在真空条件下采用物理方法将材料源(固体或液体)表面气化成气态原子、分子、或部分电离成离子,并通过低压气体(或等离子体)过程,在基体表面沉积具有某种特殊功能物料的薄膜的技术。物理气相沉积是主要的表面处理技术之一。
Physical methods are used under vacuum conditions to vaporize the surface of the material source (solid or liquid) into gaseous atoms, molecules, or partially ionized into ions, then deposit materials with certain special functions on the surface of the substrate through a low-pressure gas (or plasma) process. thin film technology. Physical vapor deposition is one of the main surface treatment technologies.
化学气相沉积(Chemical Vapor Deposition, CVD)
是一种化工技术,该技术主要是利用含有薄膜元素的一种或几种气相化合物或单质、在衬底表面上进行化学反应生成薄膜的方法。化学气相淀积是近几十年发展起来的制备无机材料的新技术。化学气相淀积法已经广泛用于提纯物质、研制新晶体、淀积各种单晶、多晶或玻璃态无机薄膜材料。这些材料可以是氧化物、硫化物、氮化物、碳化物,也可以是III-V、II-IV、IV-VI族中的二元或多元的元素间化合物,而且它们的物理功能可以通过气相掺杂的淀积过程精确控制。化学气相淀积已成为无机合成化学的一个新领域。
Chemical Vapor Deposition (CVD)
It is a chemical technology that mainly uses one or several gas phase compounds or elements containing thin film elements to perform chemical reactions on the surface of a substrate to generate a thin film. Chemical vapor deposition is a new technology developed in recent decades for the preparation of inorganic materials. Chemical vapor deposition has been widely used to purify substances, develop new crystals, and deposit various single crystal, polycrystalline or glassy inorganic thin film materials. These materials can be oxides, sulfides, nitrides, carbides, or binary or multi-element interelement compounds in groups III-V, II-IV, IV-VI, and their physical functions can be passed through the gas phase. The doped deposition process is precisely controlled. Chemical vapor deposition has become a new field of inorganic synthetic chemistry.
原子层沉积(Atomic Layer Deposition,ALD)
是一种可以将物质以单原子膜形式一层一层的镀在基底表面的方法。原子层沉积与普通的化学沉积有相似之处。但在原子层沉积过程中,新一层原子膜的化学反应是直接与之前一层相关联的,这种方式使每次反应只沉积一层原子。
Atomic Layer Deposition (ALD)
It is a method that can plate substances on the surface of a substrate in the form of a single-atom film layer by layer. Atomic layer deposition has similarities to ordinary chemical deposition. But in the atomic layer deposition process, the chemical reaction of the new layer of atomic film is directly related to the previous layer. This way, only one layer of atoms is deposited in each reaction.
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